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Proceedings Paper

CO2 laser radiation detection in compensated germanium
Author(s): S. Bumeliene; Steponas P. Asmontas; Jonas Gradauskas; A. Jukna; J. Parseliunas; Dalius Seliuta; Algirdas Suziedelis; Gintaras Valusis
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Paper Abstract

We report the results of experimental study of IR radiation detection in a bulk of compensated germanium. Au or Ni with deep levels in the forbidden energy ap was used as compensating impurities. In spite of great difference in their activation energies the change of electrical resistance of the samples under CO2 laser illumination indicated the similar rise of carrier density in the valence band which can not be explained only by means of direct hole activation character of the electrical conductivity of compensated semiconductors. Evaluation of spatial quantity of in-homogenates in compensated semiconductors confirmed the importance of energetic bands bending due to the existence of ionized impurities complexes for IR detection.

Paper Details

Date Published: 26 June 2001
PDF: 4 pages
Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); doi: 10.1117/12.431207
Show Author Affiliations
S. Bumeliene, Semiconductor Physics Institute (Lithuania)
Steponas P. Asmontas, Semiconductor Physics Institute (Lithuania)
Jonas Gradauskas, Semiconductor Physics Institute and Technical Univ. of Vilnius (Lithuania)
A. Jukna, Semiconductor Physics Institute and Technical Univ. of Vilnius (Lithuania)
J. Parseliunas, Semiconductor Physics Institute (Lithuania)
Dalius Seliuta, Semiconductor Physics Institute (Lithuania)
Algirdas Suziedelis, Semiconductor Physics Institute and Technical Univ. of Vilnius (Lithuania)
Gintaras Valusis, Semiconductor Physics Institute and Technical Univ. of Vilnius (Lithuania)


Published in SPIE Proceedings Vol. 4423:
Nonresonant Laser-Matter Interaction (NLMI-10)
Mikhail N. Libenson, Editor(s)

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