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Proceedings Paper

Modification of the surface roughness spectrum by means of power laser radiation
Author(s): Valerii P. Aksenov; G. N. Mikhailova; Johannes Boneberg; Paul Leiderer; H.-J. Muenzer
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Paper Abstract

We study the periodic damage structures that can be produced don the rough-surface of semiconductor when they are irradiated with a single beam of intense laser radiation. We observed a formation of periodic surface structures for porous Si with microscopic surface roughens. In the case of more strong rough Ge we observed an opposite effect to ripple formation: i.e. an effective destruction of resonance Fourier components of the random disturbed surface.

Paper Details

Date Published: 26 June 2001
PDF: 2 pages
Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); doi: 10.1117/12.431203
Show Author Affiliations
Valerii P. Aksenov, General Physics Institute (Russia)
G. N. Mikhailova, General Physics Institute (Russia)
Johannes Boneberg, Univ. of Konstanz (Switzerland)
Paul Leiderer, Univ. of Konstanz (Germany)
H.-J. Muenzer, Univ. of Konstanz (Germany)

Published in SPIE Proceedings Vol. 4423:
Nonresonant Laser-Matter Interaction (NLMI-10)
Mikhail N. Libenson, Editor(s)

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