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Proceedings Paper

High-efficiency and high-power laser diodes for CD-R/RW and DVD-RAM/RW
Author(s): Akihiro Shima; Motoharu Miyashita; Zempei Kawazu; Harumi Nishiguchi; Motoko Sasaki; Yoshihisa Tashiro; Tetsuya Yagi; Etsuji Omura; Yoshihiro Kokubo
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Paper Abstract

As light sources of CD-R/RW and DVD-RAM/RW, highly efficient high-power 785 nm (AlGaAs) and 660 nm (AlGaInP) lasers are demonstrated, respectively. A real-refractive-index waveguide with small internal loss is applied to both the lasers in order to reduce the operating current by improvement of the external differential quantum efficiency. The mirror degradation level is increased by reduction of the optical power density and/or a non-optical-absorbing effect of the window-mirror. As a result, the 785 nm window- mirror with AlGaAs current blocking layer has showed stable transverse mode operation up to 250 mW (kink level: over 300 mW at CW) with the high slope efficiency of 1.1 W/A. Reliable 140 mW-CW and 180 mW-pulse operation has been realized at 70 - 75 degree(s)C. As for a 660 nm laser with the window-mirror, the operation current at 70 mW is reduced by 40% due to the high slope efficiency (1.08 W/A) resulting from the low-loss ridge-waveguide. The lateral mode is well stabilized up to 70 mW by the effect of the narrow ridge stripe formed by a dry etching technique. Reliable 70 degree(s)C, 70 mW pulse (duty cycle: 50%) operation with a low operating current of around 120 - 140 mA has been achieved. In addition, the lasers have operated for over 1000 hours even at 70 degree(s)C, 80 mW.

Paper Details

Date Published: 6 June 2001
PDF: 9 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429805
Show Author Affiliations
Akihiro Shima, Mitsubishi Electric Corp. (Japan)
Motoharu Miyashita, Mitsubishi Electric Corp. (Japan)
Zempei Kawazu, Mitsubishi Electric Corp. (Japan)
Harumi Nishiguchi, Mitsubishi Electric Corp. (Japan)
Motoko Sasaki, Mitsubishi Electric Corp. (Japan)
Yoshihisa Tashiro, Mitsubishi Electric Corp. (Japan)
Tetsuya Yagi, Mitsubishi Electric Corp. (Japan)
Etsuji Omura, Mitsubishi Electric Corp. (Japan)
Yoshihiro Kokubo, Himeji Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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