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Proceedings Paper

GaN-based violet laser diodes
Author(s): Shinichi Nagahama; Naruhito Iwasa; Masayuki Senoh; Toshio Matsushita; Yasunobu Sugimoto; Hiroyuki Kiyoku; Tokuya Kozaki; Masahiko Sano; Hiroaki Matsumura; Hitoshi Umemoto; Kazuyuki Chocho; Takashi Mukai
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Paper Abstract

Three kinds of substrates were used for violet InGaN multi- quantum-well/GaN/AlGaN separate-confinement-heterostructure laser diodes (LDs). One of substrates is epitaxially laterally overgrown GaN (ELOG) substrate. Another is `free- standing GaN' substrate. In order to obtain it, thick GaN was grown on `ELOG', and then, sapphire and `ELOG' were removed. Third one is `ELOG grown on thick GaN' substrate. The threading dislocation densities of `ELOG', `free- standing GaN' and `ELOG grown on thick GaN' were 1 X 106/cm2, 5 X 107/cm2 and 7 X 105/cm2, respectively. LDs were fabricated with the structure of epi side up. The estimated lifetime of LD grown on `ELOG grown on thick GaN' was 15000 h under condition of continuous-wave operation, case temperature of 60 degree(s)C and output power of 30 mW.

Paper Details

Date Published: 6 June 2001
PDF: 7 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429804
Show Author Affiliations
Shinichi Nagahama, Nichia Corp. (Japan)
Naruhito Iwasa, Nichia Corp. (Japan)
Masayuki Senoh, Nichia Corp. (Japan)
Toshio Matsushita, Nichia Corp. (Japan)
Yasunobu Sugimoto, Nichia Corp. (Japan)
Hiroyuki Kiyoku, Nichia Corp. (Japan)
Tokuya Kozaki, Nichia Corp. (Japan)
Masahiko Sano, Nichia Corp. (Japan)
Hiroaki Matsumura, Nichia Corp. (Japan)
Hitoshi Umemoto, Nichia Corp. (Japan)
Kazuyuki Chocho, Nichia Corp. (Japan)
Takashi Mukai, Nichia Corp. (Japan)

Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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