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Proceedings Paper

Beam quality of mid-infrared angled-grating distributed-feedback lasers
Author(s): William W. Bewley; Igor Vurgaftman; Robert E. Bartolo; Michael J. Jurkovic; Christopher L. Felix; Jerry R. Meyer; Hao Lee; Ramon U. Martinelli; George W. Turner; M. J. Manfra
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Paper Abstract

We have studied the far-field characteristics of mid- infrared angled-grating distributed feedback ((alpha) -DFB) lasers with W active regions as a function of etch depth, stripe width, and optical pumping intensity. Whereas near- diffraction-limited output is obtained for 50 micrometers stripes at 10 times threshold, the beam quality degrades rapidly when either the stripe width or the pump intensity is increased. A key finding is that most of the degradation may be attributed to the onset of Fabry-Perot-like lasing modes that propagate along the direct path normal to the facets. We further show that these parasitic modes may be effectively eliminated by using ion bombardment to create angled virtual mesas surrounded by loss regions. The bombarded structures show substantial improvement of the beam quality for wide pump stripes and high pump intensities, with only a modest reduction in the efficiency.

Paper Details

Date Published: 6 June 2001
PDF: 8 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429803
Show Author Affiliations
William W. Bewley, Naval Research Lab. (United States)
Igor Vurgaftman, Naval Research Lab. (United States)
Robert E. Bartolo, Naval Research Lab. (United States)
Michael J. Jurkovic, Naval Research Lab. (United States)
Christopher L. Felix, Naval Research Lab. (United States)
Jerry R. Meyer, Naval Research Lab. (United States)
Hao Lee, Sarnoff Corp. (United States)
Ramon U. Martinelli, Sarnoff Corp. (United States)
George W. Turner, MIT Lincoln Lab. (United States)
M. J. Manfra, MIT Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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