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Proceedings Paper

High-brightness laser diodes using angular filtering by total reflection
Author(s): Joseph Rogg; Konstantin Boucke; Marc T. Kelemen; Franz Rinner; Wilfried Pletschen; Rudolf Kiefer; Martin Walther; Michael Mikulla; Reinhart Poprawe; Guenter Weimann
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Paper Abstract

A high power semiconductor laser with a novel lateral design using angular filtering by total reflection for increased brightness is demonstrated. In this so called `Z-Laser' two inner surfaces guide the laser beam by total reflection in a Z-shaped path through the laser. Higher order laser modes with larger divergence angles are suppressed because of a smaller reflectivity. This results in a reduced far-field angle. Simulations based on a 2D steady state wave equation solved by using the Pade approximation, an 1D carrier diffusion equation and a logarithmic gain model have been performed to design the device.

Paper Details

Date Published: 6 June 2001
PDF: 7 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429801
Show Author Affiliations
Joseph Rogg, Fraunhofer Institute for Applied Solid State Physics (Germany)
Konstantin Boucke, Fraunhofer Institute for Laser Technology (Germany)
Marc T. Kelemen, Fraunhofer Institute for Applied Solid State Physics (Germany)
Franz Rinner, Fraunhofer Institute for Applied Solid State Physics (Germany)
Wilfried Pletschen, Fraunhofer Institute for Applied Solid State Physics (Germany)
Rudolf Kiefer, Fraunhofer Institute for Applied Solid State Physics (Germany)
Martin Walther, Fraunhofer Institute for Applied Solid State Physics (Germany)
Michael Mikulla, Fraunhofer Institute for Applied Solid State Physics (Germany)
Reinhart Poprawe, Fraunhofer Institute for Laser Technology (Germany)
Guenter Weimann, Fraunhofer Institute for Applied Solid State Physics (Germany)


Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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