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Proceedings Paper

InGaAs/GaAsP/InGaP strain-compensated quantum well (λ=1.17 um) diode lasers on GaAs
Author(s): Nelson Tansu; Luke J. Mawst
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Paper Abstract

In this paper, we will discuss the growth, material characterization and device studies of the highly strained InGaAs-QW on GaAs, operating at (lambda) equals 1.17 micrometers . Variations in structure and MOCVD growth conditions will be discussed. High performance, (lambda) equals 1.165 micrometers laser emission is achieved from InGaAs-QW/GaAsP strain-compensated single quantum well laser structures, with threshold current densities of 65 A/cm2 for 1500-micrometers -cavity devices and transparency current densities of 50 A/cm2.

Paper Details

Date Published: 6 June 2001
PDF: 7 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429800
Show Author Affiliations
Nelson Tansu, Univ. of Wisconsin/Madison (United States)
Luke J. Mawst, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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