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Proceedings Paper

High reliability and facet temperature reduction in high-power 0.8-μm Al-free active-region diode lasers
Author(s): Toshiro Hayakawa
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Paper Abstract

Al-free active region broad stripe lasers, consisting of an InGaAsP quantum well, InGaP waveguide layers and AlGaAs clad layers, prepared by low-pressure MOVPE have shown excellent long-term reliability and relatively low temperature sensitivity for the wavelength range of 795 - 815 nm, which is suitable for solid-state laser excitation. High bandgap cladding is essential for reducing the electron leakage from the active region. We have measured the facet temperature and its distribution using modulation reflectance method.

Paper Details

Date Published: 6 June 2001
PDF: 8 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429789
Show Author Affiliations
Toshiro Hayakawa, Fuji Photo Film Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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