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Proceedings Paper

Performance of 3-W/100-um stripe diode laser at 950 and 810 nm
Author(s): Goetz Erbert; Gerhard Beister; Frank Bugge; Arne Knauer; Ralf Huelsewede; Wolfgang Pittroff; Juergen Sebastian; Hans Wenzel; Marcus Weyers; Guenther Traenkle
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Paper Abstract

In this paper we report on Al-free InGaAs/InGaAsP/InGaP broad area laser diodes emitting at 950 nm and on 810 nm- laser diodes with Al-free GaAsP quantum wells in AlGaAs waveguides. 2 mm long diode lasers show a high wall plug efficiency above 50% at output powers of about 3 W. The beam characteristics of these diode lasers benefit from small confinement factors. Results depending on stripe width and resonator length are given.

Paper Details

Date Published: 6 June 2001
PDF: 10 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429788
Show Author Affiliations
Goetz Erbert, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Gerhard Beister, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Frank Bugge, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Arne Knauer, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Ralf Huelsewede, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Wolfgang Pittroff, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Juergen Sebastian, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Hans Wenzel, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Marcus Weyers, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Guenther Traenkle, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)


Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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