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Proceedings Paper

High-power laser bars for 70-W cw (808 nm): a comparison between SQW and DQW
Author(s): Martin Behringer; Gerhard Herrmann; Stefan Groetsch; W. Teich; Johann Luft; Bruno D. Acklin; Lutz Korte; Christian Hanke; Marcel Marchiano
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Paper Abstract

We have investigated the degradation behavior of high power diode-laser bars at 80 nm with single quantum and double quantum well structures in continuous wave operation. The 1 cm bars have a fill factor of 50%. Laser diodes with different resonator lengths from 300 micrometers to 2000 micrometers have been investigated. Different bars were mounted on actively cooled submounts and operated at comparable current densities and heat load.

Paper Details

Date Published: 6 June 2001
PDF: 10 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429787
Show Author Affiliations
Martin Behringer, OSRAM Opto Semiconductor GmbH (Germany)
Gerhard Herrmann, OSRAM Opto Semiconductor GmbH (Germany)
Stefan Groetsch, OSRAM Opto Semiconductor GmbH (Germany)
W. Teich, OSRAM Opto Semiconductor GmbH (Germany)
Johann Luft, OSRAM Opto Semiconductor GmbH (Germany)
Bruno D. Acklin, OSRAM Opto Semiconductor GmbH (Germany)
Lutz Korte, Infineon Technologies AG (Germany)
Christian Hanke, Infineon Technologies AG (Germany)
Marcel Marchiano, DILAS Diodenlaser GmbH (Germany)

Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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