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Proceedings Paper

High-power long-wavelength lasers using GaAs-based quantum dots
Author(s): Nikolai N. Ledentsov; Victor M. Ustinov; Vitaly A. Shchukin; Dieter Bimberg; James A. Lott; Zhores I. Alferov
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Paper Abstract

Continuous wave room-temperature output power of approximately 3 W for edge-emitters and of about 1 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 micrometers . Long operation lifetimes are manifested. The breakthrough became possible due to development of self- organized growth and defect-reduction techniques in QD technology. We show that the basic parameters of QD lasers outperform the parameters of the devices fabricated using competing GaAs-based `quantum well' technologies.

Paper Details

Date Published: 6 June 2001
PDF: 12 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429786
Show Author Affiliations
Nikolai N. Ledentsov, Technische Univ. Berlin and A.F. Ioffe Physical-Technical Institute (Germany)
Victor M. Ustinov, A.F. Ioffe Physical-Technical Institute (Russia)
Vitaly A. Shchukin, Technische Univ. Berlin and A.F. Ioffe Physical-Technical Institute (Germany)
Dieter Bimberg, Technische Univ. Berlin (Germany)
James A. Lott, Air Force Institute of Technology (United States)
Zhores I. Alferov, A.F. Ioffe Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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