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Proceedings Paper

Enhanced-performance operation of InGaN MQW lasers with air/nitride-distributed Bragg reflector defined by focused ion beam etching
Author(s): Claudio Marinelli; Laurence J. Sargent; Michal Bordovsky; Adrian Wonfor; Judy M. Rorison; Richard V. Penty; Ian H. White; Peter J. Heard; Ghulam Hasnain; Richard P. Schneider
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Paper Abstract

Threshold reduction and enhanced mode selectivity are demonstrated in pulsed GaN-based lasers upon the introduction of 5(lambda) /4 air/nitride Bragg gratings defined by focused ion beam (FIB) etching. A 13% reduction in threshold current is obtained from a laser with a 5 micrometers wide ridge by introducing a deep-etch air/nitride mirror. The presence of a reduced-depth Bragg grating, etched across 4 micrometers wide ridge structure using a lower FIB dose, results in single-peak spectral characteristics for currents up to 1.14(DOT)ITh. The introduction of the Bragg mirrors always results in a broadening of the near field parallel to the epitaxial planes.

Paper Details

Date Published: 6 June 2001
PDF: 10 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429784
Show Author Affiliations
Claudio Marinelli, Univ. of Bristol (United Kingdom)
Laurence J. Sargent, Univ. of Bristol (United Kingdom)
Michal Bordovsky, Univ. of Bristol (United Kingdom)
Adrian Wonfor, Univ. of Bristol (United Kingdom)
Judy M. Rorison, Univ. of Bristol (United Kingdom)
Richard V. Penty, Univ. of Bristol (United Kingdom)
Ian H. White, Univ. of Bristol (United Kingdom)
Peter J. Heard, Univ. of Bristol (United Kingdom)
Ghulam Hasnain, Agilent Labs. (United States)
Richard P. Schneider, Agilent Labs. (United States)


Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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