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Proceedings Paper

Mid-IR interband cascade lasers: progress toward high performance
Author(s): John D. Bruno; Rui Q. Yang; John L. Bradshaw; John T. Pham; Donald E. Wortman
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Paper Abstract

Type-II interband cascade (IC) lasers take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we review our recent progress in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.6 - 4 micrometers . These semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Low threshold current densities (e.g., approximately 56 A/cm2 at 80 K) and power efficiency exceeding 14% were observed from mesa-stripe lasers when operated in cw mode. Also, these lasers were able to operate at temperatures up to approximately 252 K in pulsed mode and approximately 142 K in cw mode. We observed slope efficiencies exceeding 1 W/A/facet, corresponding to a differential external quantum efficiency exceeding 600%, from devices at temperatures above 80 K. A peak output power of approximately 6 W/facet was observed from an IC laser at 80 K.

Paper Details

Date Published: 6 June 2001
PDF: 12 pages
Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429783
Show Author Affiliations
John D. Bruno, Army Research Lab. (United States)
Rui Q. Yang, Maxion Technologies, Inc. (United States)
John L. Bradshaw, Army Research Lab. (United States)
John T. Pham, Army Research Lab. (United States)
Donald E. Wortman, Maxion Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 4287:
In-Plane Semiconductor Lasers V
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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