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Proceedings Paper

Ion technologies in micro- and optoelectronics
Author(s): V. Verbitsky
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Paper Abstract

The new approaches to problems of ion stimulation of technological processes of making of thin films for micro- and optoelectronic devices are surveyed. An example with titanium silicide exhibits the role of power and thermal factors during formation of chemical compounds of thin films. The obtained theoretical and experimental results are extended to ion stimulation of the MOC-VD process of A3B5 semiconductor epitaxy. An opportunity to essentially decrease a temperature of epitaxial growth for obtaining dislocationless films of A3B5 and their solid solutions is shown.

Paper Details

Date Published: 12 June 2001
PDF: 7 pages
Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); doi: 10.1117/12.429757
Show Author Affiliations
V. Verbitsky, Research Institute of Microdevices (Ukraine)


Published in SPIE Proceedings Vol. 4425:
Selected Papers from the International Conference on Optoelectronic Information Technologies
Sergey V. Svechnikov; Volodymyr P. Kojemiako; Sergey A. Kostyukevych, Editor(s)

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