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Proceedings Paper

Photosensitive thin film metal-amorphous structures semiconductor
Author(s): Ye. Lemeshevskaya; V. V. Mussil; Alexander P. Ovcharenko; Viktor P. Pilipenko
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Paper Abstract

The results of the light-sensitive three-layer structures Ag- PbI2-chalcogenide vitreous semiconductors (Ge-As-Se, Ge- As-S, Ge-P-Se, Ge-P-S) optical investigation are presented. It was observed that their optical density D changed reversibly under cycle step-by-step laser illumination with different wavelengths (442 and 633 nm). The observed photoinduced spectral changes have been discussed in consideration of the disperse state of Ag in the PbI2 layer and the formed diffraction gratings in semiconductor layer.

Paper Details

Date Published: 12 June 2001
PDF: 5 pages
Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); doi: 10.1117/12.429752
Show Author Affiliations
Ye. Lemeshevskaya, Kharkov State Polytechnical Univ. (Ukraine)
V. V. Mussil, Kharkov State Polytechnical Univ. (Ukraine)
Alexander P. Ovcharenko, Kharkov National Univ. (Ukraine)
Viktor P. Pilipenko, Kharkov State Polytechnical Univ. (Ukraine)


Published in SPIE Proceedings Vol. 4425:
Selected Papers from the International Conference on Optoelectronic Information Technologies
Sergey V. Svechnikov; Volodymyr P. Kojemiako; Sergey A. Kostyukevych, Editor(s)

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