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Proceedings Paper

Investigations of interatomic interaction in InAs-InAs1-xSbx heterostructures on a base of x-ray diffractometry
Author(s): T. I. Babjuck; A. G. Buntar; L. S. Shevtchuk
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Paper Abstract

Hetero-transitions on a base of InAs and AnSb compounds permitted to obtain cheap light diodes and detectors with the atmosphere maximal transparency region sensibility. There is assumed simultaneously, that the phon radiation in InAs-InAs1-xSbx is not large, which positively effects on receiver parameters. Changing the composition of InAs-InAs1- xSbx solution, one may obtain the structure with the width of forbidden zone of the want of 0.35 to 0,1 eV. There is developed the heterostructures crystalline lattice parameters determining method (for substrate and film) with the DRON-3M x-ray diffractometer. There was found the nonlinear dependence of the heterostructures lattice parameter on the composition. Investigations of interatomic interaction in dependence on composition and also on the forbidden zone width Eg(x) have show, that solid solutions InAs-InAs1- xSbx may be used for the obtaining of infra-red receiver.

Paper Details

Date Published: 12 June 2001
PDF: 3 pages
Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); doi: 10.1117/12.429743
Show Author Affiliations
T. I. Babjuck, Vinnytsia State Technical Univ. (Ukraine)
A. G. Buntar, Vinnytsia State Technical Univ. (Ukraine)
L. S. Shevtchuk, Vinnytsia State Technical Univ. (Ukraine)

Published in SPIE Proceedings Vol. 4425:
Selected Papers from the International Conference on Optoelectronic Information Technologies
Sergey V. Svechnikov; Volodymyr P. Kojemiako; Sergey A. Kostyukevych, Editor(s)

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