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Proceedings Paper

Isovalent substitution: a perspective method of producing heterojunction optoelectronical devices
Author(s): V. P. Makhniy; V. E. Baranjuk; N. V. Demich; V. V. Melnyk; I. V. Malimon; Mikhail M. Slyotov; B. M. Sobistchanskiy; E. V. Stets
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Paper Abstract

Mechanisms of defect-formation in heterolayers compounds II-VI had considered. Influence of isovalent impurity on generated dot point defect, optical properties and radiation stabilizing of investigated layers has discussed. The basic parameters of some devices had considered.

Paper Details

Date Published: 12 June 2001
PDF: 5 pages
Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); doi: 10.1117/12.429735
Show Author Affiliations
V. P. Makhniy, Chernivtsi State Univ. (Ukraine)
V. E. Baranjuk, Chernivtsi State Univ. (Ukraine)
N. V. Demich, Chernivtsi State Univ. (Ukraine)
V. V. Melnyk, Chernivtsi State Univ. (Ukraine)
I. V. Malimon, Chernivtsi State Univ. (Ukraine)
Mikhail M. Slyotov, Chernivtsi State Univ. (Ukraine)
B. M. Sobistchanskiy, Chernivtsi State Univ. (Ukraine)
E. V. Stets, Chernivtsi State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 4425:
Selected Papers from the International Conference on Optoelectronic Information Technologies
Sergey V. Svechnikov; Volodymyr P. Kojemiako; Sergey A. Kostyukevych, Editor(s)

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