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Proceedings Paper

Numerical simulation of carbon reflection on silicon substrate in chemical vapor deposition method by molecular dynamics
Author(s): Tomoo Kayaba; Y. Hamada; M. Saka
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Paper Abstract

In order to solve fundamental process of the nucleation of the diamond, molecular dynamics simulation of the reflection of the carbon atom is conducted. Only one carbon atom is used for the simulation aiming to show fundamental process of the nucleation. The reflection phenomenon affected by the velocity and angle of incidence of the carbon atom is presented here. The position of carbon adsorption is discussed. Finally, it is shown that the reflection phenomenon is independent of the velocity and the angle of incidence.

Paper Details

Date Published: 13 June 2001
PDF: 4 pages
Proc. SPIE 4317, Second International Conference on Experimental Mechanics, (13 June 2001); doi: 10.1117/12.429598
Show Author Affiliations
Tomoo Kayaba, Tohoku Univ. (Japan)
Y. Hamada, Tohoku Univ. (Japan)
M. Saka, Tohoku Univ. (Japan)


Published in SPIE Proceedings Vol. 4317:
Second International Conference on Experimental Mechanics
Fook Siong Chau; Chenggen Quan, Editor(s)

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