Share Email Print
cover

Proceedings Paper

Avalanche multiplication noise in bulk and thin AI(x)Ga(1-x)As (x=0-0.8) PIN and NIP diodes
Author(s): Beng Koon Ng; John P. R. David; Chee Hing Tan; S. A. Plimmer; Graham J. Rees; Richard C. Tozer; Mark Hopkinson
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The avalanche multiplication noise characteristics of AlxGa1-xAs (x equals 0-0.8) have been measured in a wide range of PIN and NIP diodes. The study includes determining the effect of the alloy fraction, x, as it varies from 0 to 0.8 while the effect of the avalanche width, w, is investigated by varying it from 1 micrometers down to 0.05 micrometers . For x equals 0-0.6, the ratio of the electron to hole ionization coefficients, 1/k, decreases from 3 (for x equals 0) to 1 (for x equals 0.6), leading to higher noise in a local prediction as x increases. Measurements for x equals 0-0.6 in nominally 1um thick diodes indicates that the excess noise factor can be approximately predicted by the local model. However, as the avalanche width reduces, a lower than expected noise factor was measured. This behaviour is associated with the effect of deadspace, whereby carriers have insufficient energy to initiate ionization for a significant region of the device. The presence of deadspace leads to a more deterministic process, which acts to reduce excess noise. For x equals 0.8 however, its 1/k value is surprisingly high in a bulk structure, leading to noise performance that is primarily determined by the 1/k value and is comparable to that of silicon. Similar to the results of thin AlxGa1-xAs (x equals 0-0.6) diodes, thinner Al0.8Ga0.2As structures exhibit excess noise factor that is significantly reduced by the nonlocal deadspace effects.

Paper Details

Date Published: 12 June 2001
PDF: 8 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429437
Show Author Affiliations
Beng Koon Ng, Univ. of Sheffield (United Kingdom)
John P. R. David, Univ. of Sheffield (United Kingdom)
Chee Hing Tan, Univ. of Sheffield (United Kingdom)
S. A. Plimmer, Univ. of Sheffield (United Kingdom)
Graham J. Rees, Univ. of Sheffield (United Kingdom)
Richard C. Tozer, Univ. of Sheffield (United Kingdom)
Mark Hopkinson, Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

© SPIE. Terms of Use
Back to Top