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Proceedings Paper

Bragg reflector for GaAs solar cells on Ge substrate
Author(s): Wenjun Chen; Zaixiang Qiao; Qiang Sun; Fusheng Du; Zhibin Xiao; Jun Xu
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Paper Abstract

For the first time, we reported that Bragg reflector with less than 10 periods designed for near band gap wavelength can reflect IR photons with energy less than 1.42 eV and reduce the solar absorptance of a GaAs/Ge solar cell from 0.889 to 0.809. This reduction would lower down the working temperature of a solar panel on space orbit by 8 degree(s)C. With the consideration that this Bragg super lattice structure can obviously improve the morphology of the hetero-epitaxy grown GaAs on Ge and a thick buffer layer are not needed any more for a good device, the design will not increase the epitaxy cost and can be used in large scale production.

Paper Details

Date Published: 12 June 2001
PDF: 8 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429430
Show Author Affiliations
Wenjun Chen, Tianjin Institute of Power Sources (China)
Zaixiang Qiao, Tianjin Institute of Power Sources (China)
Qiang Sun, Tianjin Institute of Power Sources (China)
Fusheng Du, Tianjin Institute of Power Sources (China)
Zhibin Xiao, Tianjin Institute of Power Sources (China)
Jun Xu, Tianjin Institute of Power Sources (China)


Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

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