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Proceedings Paper

Time-domain modeling of InP/InGaAs avalanche photodiodes
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Paper Abstract

By using a simplified time domain modeling approach, the temperature dependent performance characteristics such as multiplication gain and bandwidth are studied for InP/InGaAs separate absorption, grading, charge and multiplication (SAGCM) APDs within the temperature range from -243 to 358 K. The modeling approach is improved to consider the effects of hole diffusion, hole trapping, load circuit RC and gain-bandwidth product limit together with the fast Fourier transformation component of the impulse response from the time domain computation. The modeling results agree with experiments. The effects of changing material parameters on modeling are also discussed. The improved performance characteristics also indicate the potential application prospects of InP/InGaAs SAGCM APDs in low temperature environments.

Paper Details

Date Published: 12 June 2001
PDF: 9 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429427
Show Author Affiliations
Yegao Xiao, McMaster Univ. (Canada) and Simon Fraser Univ. (Canada)
M. Jamal Deen, McMaster Univ. (Canada) and Simon Fraser Univ. (Canada)

Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

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