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Proceedings Paper

Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate
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Paper Abstract

Using low-pressure metalorganic chemical vapor deposition, we have grown GaInAs/InP QWIP structures on GaAs-coated Si substrate. First, the procedure to optimize the epitaxy of the InP buffer layer on Si substrate is given. Excellent crystallinity and a mirror-like surface morphology were obtained by using both a two-step growth process at the beginning of the InP buffer layer growth and several series of thermal cycle annealing throughout the InP buffer layer growth. Second, results of fabricated GaInAs/InP QWIPs on Si substrate are presented. At a temperature of 80 K, the peak response wavelength occurs at 7.4 micrometers . The responsivities of QWIPs on both Si and InP substrates with identical structures are equal up to biases of 1.5 V. At a bias of 3 V, the responsivity of the QWIPs on Si substrate is 1.0 A/W.

Paper Details

Date Published: 12 June 2001
PDF: 8 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429426
Show Author Affiliations
Matthew Erdtmann, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

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