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Proceedings Paper

InP/InGaAs-based hi-lo avalanche photodetectors for high-speed optical communications
Author(s): Chan-Yong Park; Seung-Goo Kang; Ilgu Yun; Kyung-Sook Hyun; Heung-Ro Choo; El-Hang Lee
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Paper Abstract

We present an overview on the progress of InP/InGaAs based Hi-Lo APD's, which are important for long-haul optical fiber communications. Much of recent research efforts have been focused on improving the operation reliability, the gain- bandwidth (GB) product, and reducing the excess noise factor. To achieve a high GB product and a reliable operation, the reduction of the thickness of the multiplication layer and an optimum design of the internal electric field distribution are essential. The concept of the planar InP/InGaAs APD is very important from this perspective and the Hi-Lo APD's are expected to play an important role.

Paper Details

Date Published: 12 June 2001
PDF: 8 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429423
Show Author Affiliations
Chan-Yong Park, XL Photonics, Inc. (South Korea)
Seung-Goo Kang, XL Photonics, Inc. (South Korea)
Ilgu Yun, Yonsei Univ. (South Korea)
Kyung-Sook Hyun, Electronics and Telecommunication Research Institute (South Korea)
Heung-Ro Choo, XL Photonics, Inc. (South Korea)
El-Hang Lee, Inha Univ. (South Korea)


Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

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