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Proceedings Paper

Heterojunction interfacial workfunction detectors for far-infrared applications
Author(s): A. G. Unil Perera; S. G. Matsik; Viatcheslav Yu Letov; Hui Chun Liu; Aidong Shen; Ming Gao; Zbigniew R. Wasilewski; Margaret Buchanan; S. J. Rolfe
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Paper Abstract

Results are presented for a novel HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) far-infrared detector with a cutoff wavelength of 70 micrometers . A responsivity of 10.5 A/W and a D* of approximately 1013 cm(root)Hz/W at 20 micrometers was achieved at 4.2 K. Dark current for the detectors was 2 orders of magnitude better than for homojunction interfacial workfunction internal photoemission (HIWIP) detectors at liquid helium temperatures. Capacitance measurements show similar behavior to other infrared photodetectors such as HIWIPs and QWIPs. The overall superior characteristics of HEIWIP detectors over HIWIP and QWIP detectors at longer wavelengths are of interest for future developments in far-infrared applications.

Paper Details

Date Published: 12 June 2001
PDF: 8 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429422
Show Author Affiliations
A. G. Unil Perera, Georgia State Univ. (United States)
S. G. Matsik, Georgia State Univ. (United States)
Viatcheslav Yu Letov, Georgia State Univ. (United States)
Hui Chun Liu, National Research Council Canada (Canada)
Aidong Shen, National Research Council Canada (Canada)
Ming Gao, National Research Council Canada (Canada)
Zbigniew R. Wasilewski, National Research Council Canada (Canada)
Margaret Buchanan, National Research Council Canada (Canada)
S. J. Rolfe, National Research Council Canada (Canada)


Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

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