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Proceedings Paper

Novel Sb-based alloy for uncooled infrared photodetector applications
Author(s): Manijeh Razeghi
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Paper Abstract

We report on the growth and characterization of InSbBi, InTlSb, InTlP, and the quaternary alloys for uncooled long- wavelength infrared photodetector applications. The layers were grown on InSb and GaAs substrates by low-pressure metalorganic chemical vapor deposition. The incorporation of Bi and Tl in InSb was investigated with high-resolution x- ray diffraction, energy dispersive x-ray analysis, and optical photoresponse measurements. We also demonstrate the photodetectors fabricated from the grown InSbBi and InTlSb alloys. InSb0.96Bi0.04 photoconductive detectors exhibited a responsivity of 3.2 V/W at 77 K. The estimated Johnson noise limited detectivity at 7 micrometers was 1.7 X 108 cmHz1/2/W at 77 K. A room temperature operating InSb0.95Bi0.05 photodetector was also demonstrated. Photoresponse up to 12 micrometers was achieved at 300 K. The responsivity and Johnson noise-limited detectivity at 10.6 micrometers were 1.9 mV/W and 1.2 X 106 cmHz1/2/W, respectively. Photoresponse up to 15 micrometers was achieved at 300 K from quaternary InTlAsSb and InBiAsSb alloys.

Paper Details

Date Published: 12 June 2001
PDF: 12 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429414
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

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