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Proceedings Paper

Fundamental physics of infrared detector materials
Author(s): Michael A. Kinch
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Paper Abstract

The fundamental parameters of IR photon detection are discussed relevant to the meaningful comparison of a wide range of proposed IR detecting materials systems. The thermal generation rate of the IR material is seen to be the key parameter that enables this comparison. The simple materials physics of (1) intrinsic direct bandgap semiconductors, (2) extrinsic semiconductors, (3) quantum well devices, including types I, II, and III superlattices, (4) Si Schottky barriers, are examined with regard to the potential performance of these materials as IR detectors, utilizing the thermal generation rate as a differentiator. The possibility of room temperature photon detection over the whole IR spectral range is discussed, and comparison made with uncooled thermal detection.

Paper Details

Date Published: 12 June 2001
PDF: 12 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429412
Show Author Affiliations
Michael A. Kinch, DRS Infrared Technologies, LP (United States)


Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

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