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Proceedings Paper

Optical investigation of InGaAsN structures for photodetector applications
Author(s): Jean Benoit Heroux; Xiaoping Yang; B. Turk; Wen I. Wang
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Paper Abstract

The optical properties of InGaAsN structures for the fabrication of photodetectors are investigated. An expression for the bulk bandgap as a function of the nitrogen fraction is obtained from x-ray diffraction, photoreflectance and photoluminescence measurements. Optical absorption of undoped MQW structures show that the cutoff wavelength is extended due to the presence of nitrogen. A functioning heterojunction phototransistor was fabricated. Photocurrent spectra show that a responsivity higher than 1.5 A/W is obtained with a cutoff wavelength of 1.16 micrometers . I-V measurements under different light levels show that a peak gain of 5 is obtained with a collector current of 260 (mu) A and a dark current lower than 2 nA with a 10V bias.

Paper Details

Date Published: 12 June 2001
PDF: 8 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429411
Show Author Affiliations
Jean Benoit Heroux, Columbia Univ. (United States)
Xiaoping Yang, Columbia Univ. (United States)
B. Turk, Columbia Univ. (United States)
Wen I. Wang, Columbia Univ. (United States)


Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

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