Share Email Print
cover

Proceedings Paper

High-speed low-energy photoconductive receiver with high gain
Author(s): Merlin Welker; D. Zipperer; S. Malzer; Reiner Windisch; Paul L. Heremans; Gottfried H. Doehler
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report on an optoelectronic receiver consisting of a special photoconductive n-i-p detector and a n-i-p reference diode fabricated from the same structure. The receiver is illuminated by two surface-normal light beams using a dual rail code. All applied DC biases are compatible with normal silicon CMOS logic, no AC biasing is required. The photoconductive gain of the receiver allows for output currents of more than 10 mA without any further amplification. The active device area of the smallest detectors has been scaled down to 120 micrometers 2, resulting in a total optical switching energy for this receiver as low as 348 fJ. This optical switching energy is constant over a wide range of input power, resulting in fast switching times at sufficiently high input power while still retaining well-defined, but slower switching characteristics at lower input powers. Using input beams with 0.6 mW optical power at a wavelength of 787 nm, high speed measurements with a 3 dB frequency in excess of 400 MHz have been made. At these measurements a photoconductive gain of 6 times the p-i-n photocurrent was achieved, but using input powers of about 7 nW a gain in excess of 106 has been demonstrated. Due to their simple design and biasing demands these photoconductive receivers are well suited for smart pixel applications and optical interconnects. For demonstration we present results for new a monolithically integrated smart pixel with a high-efficiency non-resonant cavity LED as emitter.

Paper Details

Date Published: 12 June 2001
PDF: 10 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429395
Show Author Affiliations
Merlin Welker, Friedrich-Alexander-Univ. Erlangen-Nuernberg (Germany)
D. Zipperer, Friedrich-Alexander-Univ. Erlangen-Nuernberg (Germany)
S. Malzer, Friedrich-Alexander-Univ. Erlangen-Nuernberg (Germany)
Reiner Windisch, IMEC (Belgium)
Paul L. Heremans, IMEC (Belgium)
Gottfried H. Doehler, Friedrich-Alexander-Univ. Erlangen-Nuernberg (Germany)


Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

© SPIE. Terms of Use
Back to Top