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Proceedings Paper

Investigation of regimes of structural defect accumulation and relaxation on silicon surface under periodic-pulse laser radiation
Author(s): Alexander F. Banishev; Vladimir S. Golubev; Alexei Yu. Kremnev
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Paper Abstract

The paper pursues an experimental investigation on solid- phase destruction of thin surface silicon layer (h approximately equals 10-4 cm) in vacuum, related to accumulation of dislocations under periodic action of short pulses. It has been concluded that the destruction of sample surface will be governed by competition of processes of dislocation growth and relaxation. It has been shown that the destruction of surface is caused by the requisite number Nc of laser pulses. The plots of Nc against power density and pulse repetition period have been constructed.

Paper Details

Date Published: 30 May 2001
PDF: 7 pages
Proc. SPIE 4429, International Seminar on Novel Trends in Nonlinear Laser Spectroscopy and High-Precision Measurements in Optics, (30 May 2001); doi: 10.1117/12.428352
Show Author Affiliations
Alexander F. Banishev, Institute on Laser and Information Technologies (Russia)
Vladimir S. Golubev, Institute on Laser and Information Technologies (Russia)
Alexei Yu. Kremnev, Institute on Laser and Information Technologies (Russia)


Published in SPIE Proceedings Vol. 4429:
International Seminar on Novel Trends in Nonlinear Laser Spectroscopy and High-Precision Measurements in Optics
Sergei N. Bagaev; Victor N. Zadkov; Sergei M. Arakelian, Editor(s)

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