The present paper is devoted to detailed investigation of the low-temperature optical and photoelectric properties of Cd_1-xHg_xTe:V (x<EQ0.088) crystals which provided information on the optical quality of these crystals and the nature of their inhomogeneity, and also the nature and the position of the energy levels of deep V²⁺ and V³⁺ (single and complex) impurity centers and singly charged complex acceptors. It was shown that the anisotropy of complex impurity centers is determined by the nature of the donor atom and its position in the crystal lattice. It should be noted that such crystals were grown for the first time by the Bridgman method. Transport measurements (T=300K) showed that the samples were highly compensated with a dark resistivity greater than 10⁶(Omega) $CTR cm. It was shown that the anisotropic V²⁺ centers may be caused by formation of complex impurity (V²⁺_Cd+ X_Te) centers, where X are the accidental impurities of group VII atoms positioned at anionic sites. The appearance of rhombohedral V²⁺ centers may be caused by the formation of the complex (V²⁺_Cd+ X_Te) centers whose axis is oriented in one of the <110> direction. In the case of the tetragonal V²⁺ centers the Z atoms are positioned at cationic sites in one of the equivalent <001> directions. In the case of the Cd_1-xHG_xTe:V crystals Z may be the Hg Atoms.

Date Published: 30 May 2001
PDF: 11 pages
Proc. SPIE 4418, Eighth International Conference on Nonlinear Optics of Liquid and Photorefractive Crystals, 44180W (30 May 2001); doi: 10.1117/12.428318

Published in SPIE Proceedings Vol. 4418:
Eighth International Conference on Nonlinear Optics of Liquid and Photorefractive Crystals
Gertruda V. Klimusheva; Andrey G. Iljin, Editor(s)