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Proceedings Paper

Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells
Author(s): Bing-Ruey Wu; Ching-Fuh Lin; Lih-Wen Laih; Tien-Tsorng Shih
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Paper Abstract

Extremely broadband emission is obtained from superluminescent diodes/semiconductor laser amplifiers with nonidentical quantum wells made of InGaAsP/InP materials. Two opposite sequences of nonidentical multiple quantum wells (MQWs), consisting of three In0.67Ga0.33As0.72P0.28 quantum wells and two In0.53Ga0.47As QWs, are designed, fabricated, and measured. Nonuniform carrier distribution inside MQWs is further verified experimentally.

Paper Details

Date Published: 30 May 2001
PDF: 10 pages
Proc. SPIE 4292, Optoelectronic Interconnects VIII, (30 May 2001); doi: 10.1117/12.428027
Show Author Affiliations
Bing-Ruey Wu, National Taiwan Univ. (Taiwan)
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)
Lih-Wen Laih, Chunghua Telecom Co., Ltd. (Taiwan)
Tien-Tsorng Shih, Chunghua Telecom Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4292:
Optoelectronic Interconnects VIII
Suning Tang; Yao Li, Editor(s)

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