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Proceedings Paper

Ablation plasma ion implantation: experiments and theory
Author(s): Ronald M. Gilgenbach; Bo Qi; Yue Ying Lau; Mark W. Johnston; L. M. Wang; Gary L. Doll; Alexi Laxarides
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Paper Abstract

Research is underway to accelerate laser ablation plume ions for implantation (APII) into substrate. Ablation plasma ion implantation biases the deposition substrate by a large negative voltage pulse. APII has the advantages of direct acceleration and implantation of ions from metals or any other solid targets. This process is environmentally benign because it avoids the use of toxic gaseous precursors. Initial experiments are directed towards the implantation of iron ions into silicon substrates at negative voltages up to -10 kV.

Paper Details

Date Published: 29 May 2001
PDF: 10 pages
Proc. SPIE 4276, Commercial and Biomedical Applications of Ultrashort Pulse Lasers; Laser Plasma Generation and Diagnostics, (29 May 2001); doi: 10.1117/12.428008
Show Author Affiliations
Ronald M. Gilgenbach, Univ. of Michigan (United States)
Bo Qi, Univ. of Michigan (United States)
Yue Ying Lau, Univ. of Michigan (United States)
Mark W. Johnston, Univ. of Michigan (United States)
L. M. Wang, Univ. of Michigan (United States)
Gary L. Doll, Timken Research (United States)
Alexi Laxarides, Timken Research (United States)


Published in SPIE Proceedings Vol. 4276:
Commercial and Biomedical Applications of Ultrashort Pulse Lasers; Laser Plasma Generation and Diagnostics
Richard F. Haglund; Richard F. Haglund; Richard F. Wood; Joseph Neev; Richard F. Wood, Editor(s)

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