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Proceedings Paper

Development of electrochromic devices of tungsten oxide thin film integrated with p-i-n photodetector
Author(s): Jyh-Jier Ho; Yuen Keun Fang; Chin-Ying Chen; Kuen-Hsien Lee; Min-Feng Lai
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Paper Abstract

In this paper, a new electro-chromic device (ECD) is developed by tungsten oxide (WO3) thin film integrated with a-Si1-xGex:H pin photodetector. With the addition of the palladium (Pd) film to ionize hydrogen gas, the WO3 thin film will react with hydrogen ion and transfer from transparency to blue color. This color change will degrade the absorption of light with wavelength larger than blue color. First, we determine the most suitable condition (by increasing the partial oxygen pressure) to produce a-WOx films, thus offering a good electro- chromic performance for opto-switching applications. Then, the photo current generated by a-Si1-xGex:H pin photodetector will be lowered down, thus detecting the existing of hydrogen gas. Especially, the WO3-pin hydrogen sensor also shows highly selectivity with hydrogen gas to separate from CO and C2H5OH gases.

Paper Details

Date Published: 8 May 2001
PDF: 6 pages
Proc. SPIE 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001), (8 May 2001); doi: 10.1117/12.427077
Show Author Affiliations
Jyh-Jier Ho, Fortune Institute of Technology (Taiwan)
Yuen Keun Fang, National Cheng-Kung Univ. (Taiwan)
Chin-Ying Chen, Fortune Institute of Technology (Taiwan)
Kuen-Hsien Lee, National Cheng-Kung Univ. (Taiwan)
Min-Feng Lai, Fortune Institute of Technology (Taiwan)


Published in SPIE Proceedings Vol. 4416:
Optical Engineering for Sensing and Nanotechnology (ICOSN 2001)
Koichi Iwata, Editor(s)

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