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Proceedings Paper

Impulse response of the metal-semiconductor-metal photodetector with heterobarrier
Author(s): Stanislav V. Averine; Yuen Chuen Chan; Yee Loy Lam; Oleg Bondarenko; Remy Sachot
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Paper Abstract

Impulse response of a metal-semiconductor-metal photodiode to a short laser pulse is computed and discussed in terms of the distribution of photogenerated carriers and electric fields. We show that the heterobarrier structure in the light absorbing region greatly enhances the response speed of InP/GaInAs MSM detector.

Paper Details

Date Published: 8 May 2001
PDF: 4 pages
Proc. SPIE 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001), (8 May 2001); doi: 10.1117/12.427076
Show Author Affiliations
Stanislav V. Averine, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)
Oleg Bondarenko, Swiss Federal Institute of Technology/Lausanne (Switzerland)
Remy Sachot, Swiss Federal Institute of Technology/Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 4416:
Optical Engineering for Sensing and Nanotechnology (ICOSN 2001)
Koichi Iwata, Editor(s)

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