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Proceedings Paper

Performance analysis and development of high-speed p-i-n infrared sensors prepared on crystalline silicon substrates
Author(s): Chin-Ying Chen; Jyh-Jier Ho; Yuen Keun Fang; Shih-Fang Chen
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Paper Abstract

In this paper, different structures of high-speed infrared (IR) sensors based on amorphous silicon germanium and amorphous silicon hetero-structures have been successfully developed on crystalline silicon substrates. Experimental results of these developed structures exhibit a superior device performance to that of a traditional pin amorphous photo-sensor prepared on a glass substrate, especially significant improvements in the rise time from 465 (microsecond(s) ) to 195 (microsecond(s) ), and the dark current from 50 ((mu) A) to 3.3 ((mu) A) for 5 (V) reverse bias.

Paper Details

Date Published: 8 May 2001
PDF: 6 pages
Proc. SPIE 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001), (8 May 2001); doi: 10.1117/12.427074
Show Author Affiliations
Chin-Ying Chen, Fortune Institute of Technology (Taiwan)
Jyh-Jier Ho, Fortune Institute of Technology (Taiwan)
Yuen Keun Fang, National Cheng-Kung Univ. (Taiwan)
Shih-Fang Chen, Fortune Institute of Technology (Taiwan)


Published in SPIE Proceedings Vol. 4416:
Optical Engineering for Sensing and Nanotechnology (ICOSN 2001)
Koichi Iwata, Editor(s)

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