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Proceedings Paper

Strong yellow electroluminescence from manganese-silicon-implanted silicon-dioxide layers
Author(s): Sergey Novikov; Victor F. Ovchinnikov; Jaakko Haerkoenen; Juha A.T. Sinkkonen
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Paper Abstract

Room temperature (RT) electroluminescence (EL) was obtained for the first time from Mn enriched Si/SiO2 structure. Si+ or Ar+ stimulated knock-on implantation through 20 nm Mn film with the subsequent annealing was used for EL device fabrication. Devices exhibit bright emission band at the 2.06 eV. The position does neither depend on implanted ion dose nor annealing procedure. EL is visible by naked eye even at current density as low as 1.5x10-6 Acm-2. Continuous wave external quantum efficiency 1.1x10-3 and power efficiency 1.5x10-5 have been achieved.

Paper Details

Date Published: 18 May 2001
PDF: 8 pages
Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426935
Show Author Affiliations
Sergey Novikov, Helsinki Univ. of Technology (Finland)
Victor F. Ovchinnikov, Helsinki Univ. of Technology (Finland)
Jaakko Haerkoenen, Helsinki Univ. of Technology (Finland)
Juha A.T. Sinkkonen, Helsinki Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 4293:
Silicon-based and Hybrid Optoelectronics III
David J. Robbins; John Alfred Trezza; Ghassan E. Jabbour, Editor(s)

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