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Proceedings Paper

Electroluminescence at Si bandgap energy from metal-oxide-semiconductor tunneling diodes
Author(s): Ching-Fuh Lin; Miin-Jang Chen; Ming-Hung Lee; Cheewee Liu
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Paper Abstract

We report room-temperature electroluminescence at Si bandgap energy from Metal-Oxide-Semiconductor (MOS) tunneling diodes. The ultrathin gate oxide with thickness 1 to approximately 3 nm was grown by rapid thermal oxidation (RTO) to allow significant current to tunnel through. The measured EL efficiency of the MOS tunneling diodes increases with the injection current and could be in the order of 10-5, which exceeds the limitation imposed by indirect bandgap nature of Si. We also study the temperature dependence of the electroluminescence and photoluminescence. The electroluminescence is much less dependent on temperature than photoluminescence from Si. The applied external field that results in the accumulation of majority carriers at Si/SiO2 interface in the case of electroluminescence could be the reason for such difference. The involved physics such as optical phonon, interface roughness, localized carriers, and exciton radiative recombination are used to explain the electroluminescence from silicon MOS tunneling diodes.

Paper Details

Date Published: 18 May 2001
PDF: 8 pages
Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426934
Show Author Affiliations
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)
Miin-Jang Chen, National Taiwan Univ. (Taiwan)
Ming-Hung Lee, National Taiwan Univ. (Taiwan)
Cheewee Liu, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4293:
Silicon-based and Hybrid Optoelectronics III
David J. Robbins; John Alfred Trezza; Ghassan E. Jabbour, Editor(s)

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