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Proceedings Paper

Optical gain in silicon nanocrystals
Author(s): Lorenzo Pavesi; Luca Dal Negro; Massimo Cazzanelli; Georg Pucker; Zeno Gaburro; G. C. Prakash; G. Franzo; Franceso Priolo
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Paper Abstract

Silicon nanocrystals, formed by ion implantation and subsequent thermal annealing, show positive optical gain under intense laser excitation. Gain has been measured by the variable strip length method where the amplified spontaneous emission intensity, which is emitted from the sample edge, is measured as a function of the excitation volume. Exponential increase, line narrowing and directionality of stimulated emission have been measured. In addition, by growing silicon nanocrystals in a quartz substrate, single pass gain in pump and probe transmission experiments has been measured. Material gain values as high as those typically found in III-V semiconductors quantum dots have been measured. We claim that population inversion is realized between the fundamental and the recently identified Si equals O interface state. This model explains the gain observations and could account for the lack of auger saturation, free carrier absorption and size dispersion. Critical issues to obtain sizable gain are (1) high oxide quality, (2) high areal density of silicon nanocrystals, and (3) nanocrystals placed in the core region of a waveguide.

Paper Details

Date Published: 18 May 2001
PDF: 11 pages
Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426932
Show Author Affiliations
Lorenzo Pavesi, INFM and Univ. of Trento (Italy)
Luca Dal Negro, INFM and Univ. of Trento (Italy)
Massimo Cazzanelli, INFM and Univ. of Trento (Italy)
Georg Pucker, INFM and Univ. of Trento (Italy)
Zeno Gaburro, INFM and Univ. of Trento (Italy)
G. C. Prakash, INFM and Univ. of Trento (Italy)
G. Franzo, INFM and Univ. of Catania (Italy)
Franceso Priolo, INFM and Univ. of Catania (Italy)

Published in SPIE Proceedings Vol. 4293:
Silicon-based and Hybrid Optoelectronics III
David J. Robbins; John Alfred Trezza; Ghassan E. Jabbour, Editor(s)

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