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Proceedings Paper

p-i-n germanium photodetectors integrated on silicon substrates
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Paper Abstract

We report on the integration of Ge p-i-n heterojunction photodiodes on Si substrates. The crucial role of interface defects at the Ge/Si interface on the performance of photodetectors is analyzed and taken into account in the design of the devices. We have designed and fabricated high performance p-i-n Ge photodiodes for the near infrared. Pure Ge is grown by ultra-high-vacuum CVD followed by a cyclic thermal annealing and ion implantation. Devices are fabricated using standard photolithography. The photodiodes exhibit maximum responsivity of 0.8 A/W at 1.3 micrometers and 0.7 A/W at 1.55 micrometers , reverse dark currents in the 20 mA/cm2 range at 1V and response times as short as 520 ps. Our devices are the first p-i-n Ge on Si photodetectors fabricated by CVD and exhibit high performances for a wide range of applications.

Paper Details

Date Published: 18 May 2001
PDF: 9 pages
Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426930
Show Author Affiliations
Lorenzo Colace, Univ. degli Studi di Roma Tre (Italy)
Gianlorenzo Masini, Univ. degli Studi di Roma Tre (Italy)
Gaetano Assanto, Univ. degli Studi di Roma Tre (Italy)
Hsin-Chiao Luan, Massachusetts Institute of Technology (United States)
Lionel C. Kimerling, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 4293:
Silicon-based and Hybrid Optoelectronics III
David J. Robbins; John Alfred Trezza; Ghassan E. Jabbour, Editor(s)

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