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Proceedings Paper

Materials processing technology for the integration of effective Ge p-i-n photodetectors on Si for Si microphotonics
Author(s): Hsin-Chiao Luan; Meghan A. Kerner; Lionel C. Kimerling; Lorenzo Colace; Gianlorenzo Masini; Gaetano Assanto
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Paper Abstract

We present a technology for the integration of high performance near-infrared Ge P-I-N photodetectors on Si for Si microphotonics. High quality Ge epilayers were grown on Si by a two-step ultrahigh-vacuum / chemical-vapor-deposition (UHV/CVD) process. Two-step UHV/CVD allows the epitaxial growth of Ge on Si without islanding. Threading-dislocations in Ge epilayers were reduced by cyclic thermal annealing. The reduction of threading-dislocations can be understood in terms of thermal stress induced dislocation glide and reactions. We found that sessile threading-dislocations are not permanent and can be removed.

Paper Details

Date Published: 18 May 2001
PDF: 5 pages
Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426929
Show Author Affiliations
Hsin-Chiao Luan, Massachusetts Institute of Technology (United States)
Meghan A. Kerner, Massachusetts Institute of Technology (United States)
Lionel C. Kimerling, Massachusetts Institute of Technology (United States)
Lorenzo Colace, Univ. degli Studi di Roma Tre (Italy)
Gianlorenzo Masini, Univ. degli Studi di Roma Tre (Italy)
Gaetano Assanto, Univ. degli Studi di Roma Tre (Italy)


Published in SPIE Proceedings Vol. 4293:
Silicon-based and Hybrid Optoelectronics III
David J. Robbins; John Alfred Trezza; Ghassan E. Jabbour, Editor(s)

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