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Proceedings Paper

Highly efficient Ge detector integrated with waveguide based on SOI technology
Author(s): Yin-Sheng Tang; H. C. Shi; James K. Chan; Jian-Lin Liu; Da Teng; Kang Lung Wang
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Paper Abstract

This paper reports the growth, fabrication and characterization of integrated Ge detectors with rib waveguides based on SOI technology. The MBE Ge diode structures were first grown on different graded buffers on SOI wafers. These structures were then fabricated into individual and integrated diodes with various kinds of rib waveguides. Analysis of the performance of the integrated detectors indicates that Ge detectors with quantum efficiency over 70% can be achieved at 1.55um. Major obstacle for practical applications of these Ge detectors will be discussed.

Paper Details

Date Published: 18 May 2001
PDF: 4 pages
Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426928
Show Author Affiliations
Yin-Sheng Tang, Research and Development Labs. (United States)
H. C. Shi, Research and Development Labs. (United States)
James K. Chan, Research and Development Labs. (United States)
Jian-Lin Liu, Univ. of California/Los Angeles (United States)
Da Teng, Univ. of California/Los Angeles (United States)
Kang Lung Wang, Univ. of California/Los Angeles (United States)


Published in SPIE Proceedings Vol. 4293:
Silicon-based and Hybrid Optoelectronics III
David J. Robbins; John Alfred Trezza; Ghassan E. Jabbour, Editor(s)

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