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Proceedings Paper

Intersubband-electroluminescence from Si/SiGe quantum cascade structures
Author(s): Gabriel Dehlinger; Laurent Diehl; Ulf Gennser; Hans Sigg; Jerome Faist; Detlev A. Gruetzmacher; Klaus Ensslin; Elizabeth Mueller
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Paper Abstract

We report the observation of electroluminescence from intersubband transitions in the valence band of Si/SiGe quantum cascade structures. The samples were grown by molecular beam epitaxy at 350 degree(s)C and reveal good crystal quality as determined by transmission electron microscopy and high resolution x-ray diffraction. The 4-fold quantum cascade structure is repeated 3 times interspersed by two Si spacer layers to reduce the high strain. Electrical contact is provided by the doped back and top contact layers. The electroluminescence of three samples is investigated. The peak energy of 130 meV to 150 meV is found to be close to the calculated value of the intended heavy hole (HH) 2 to HH1 transition of the respective sample. The luminescence signal is TM polarized as expected for intersubband transitions between HH levels. By comparison with a III-V quantum cascade structure the lifetime of the upper state could be determined; it was found that it depends strongly on the design, but it can reach values comparable to III-V quantum cascade structures.

Paper Details

Date Published: 18 May 2001
PDF: 7 pages
Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426922
Show Author Affiliations
Gabriel Dehlinger, Paul Scherrer Institut (Switzerland)
Laurent Diehl, Paul Scherrer Institut (Switzerland)
Ulf Gennser, Paul Scherrer Institut and Lab. de Materiaux Moleculaires (Switzerland)
Hans Sigg, Paul Scherrer Institut (Switzerland)
Jerome Faist, Univ. of Neuchatel (Switzerland)
Detlev A. Gruetzmacher, Paul Scherrer Institut (Switzerland)
Klaus Ensslin, ETH Zuerich (Switzerland)
Elizabeth Mueller, Paul Scherrer Institut (Switzerland)

Published in SPIE Proceedings Vol. 4293:
Silicon-based and Hybrid Optoelectronics III
David J. Robbins; John Alfred Trezza; Ghassan E. Jabbour, Editor(s)

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