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Proceedings Paper

Waveguides and modulators in 3C-SiC
Author(s): Adrian K. Kewell; Adrian P. Vonsovici; Graham T. Reed; Alan G. R. Evans
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Paper Abstract

We have designed and fabricated waveguide optical modulators using cubic silicon carbide-(3C-SiC)-on-insulator rib waveguides. A refractive index change is induced in the rib via the plasma dispersion effect. These types of devices have potential for relatively high-speed silicon-based photonics compatible with silicon processing technology, as compared to pure silicon. Furthermore, the wide bandgap (2.2 eV) of 3C-SiC makes the devices suitable for use over the visible and near infrared spectrum range as well as the longer communication wavelengths. We have demonstrated waveguiding in 3C-SiC, fabricating the waveguides by ion implantation of oxygen into a silicon carbide layer. We have also established a processing recipe for the SiC wafers which enables fabrication of 3- dimensional devices. The work reported here describes the fabrication of the devices and presents preliminary experimental results for the waveguide losses and the modulation of the refractive index as a function of applied current. An efficient waveguide modulator for a single polarization is reported.

Paper Details

Date Published: 18 May 2001
PDF: 9 pages
Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426920
Show Author Affiliations
Adrian K. Kewell, Univ. of Surrey (United Kingdom)
Adrian P. Vonsovici, Bookham Technology plc (United Kingdom)
Graham T. Reed, Univ. of Surrey (United Kingdom)
Alan G. R. Evans, Univ. of Southampton (United Kingdom)

Published in SPIE Proceedings Vol. 4293:
Silicon-based and Hybrid Optoelectronics III
David J. Robbins; John Alfred Trezza; Ghassan E. Jabbour, Editor(s)

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