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Proceedings Paper

Integrated optoelectronic circuits with InP-based HBTs
Author(s): Daniel Yap; Y. K. Brown; Robert H. Walden; Tom P. E. Broekaert; K. R. Elliott; M. W. Yung; David L. Persechini; Willie W. Ng; Alan R. Kost
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Paper Abstract

Integrated optoelectronic circuits that are capable of very high speeds or high functionality have been demonstrated using InP-based heterojunction bipolar transistors (HBTs). Optoelectronic receivers contain photodetectors fabricated from the same epitaxial material structure as the HBTs. High-functionality digital receivers, analog receiver arrays as well as analog-to-digital converters have been realized. Optoelectronic modulation circuits for signal transmission also contain separately grown, surface-coupled multiple- quantum-well (MQW) modulators.

Paper Details

Date Published: 16 May 2001
PDF: 11 pages
Proc. SPIE 4290, Optoelectronic Integrated Circuits and Packaging V, (16 May 2001); doi: 10.1117/12.426901
Show Author Affiliations
Daniel Yap, HRL Labs., LLC (United States)
Y. K. Brown, HRL Labs., LLC (United States)
Robert H. Walden, HRL Labs., LLC (United States)
Tom P. E. Broekaert, HRL Labs., LLC (United States)
K. R. Elliott, HRL Labs., LLC (United States)
M. W. Yung, HRL Labs., LLC (United States)
David L. Persechini, HRL Labs., LLC (United States)
Willie W. Ng, HRL Labs., LLC (United States)
Alan R. Kost, Optical Sciences Ctr./Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 4290:
Optoelectronic Integrated Circuits and Packaging V
Randy A. Heyler; James G. Grote; Randy A. Heyler, Editor(s)

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