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Proceedings Paper

Negative luminescence from InAsSbP-based diodes in the 4.0- to 4.3-μm range
Author(s): Boris A. Matveev; Meyrhan Aydaraliev; Nonna V. Zotova; Sergey A. Karandashev; Maxim A. Remennyi; Nikolai M. Stus'; Georgii N. Talalakin; Volodymyr K. Malyutenko; Oleg Yu. Malyutenko
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Paper Abstract

Negative luminescence (NL) operation at ∼4 µm for p-InAsSbP/n-InAs and 4÷5 µm for p-InAsSb/n-InAsSb(P) diodes with FWHM∼0.1⋅λmax is reported for a reverse bias operation mode. NL output at 180oC is as high as 3÷5 µW and negative apparent temperature contrast is as strong as ∆T= - (6÷10°C) which show advantages of InAs and InAsSb based NL devices for high temperature applications. The remarkable feature is the uniformity of spatial NL output distribution, which is a confirmation of the existence of a potential barrier in narrow band p-n junction at elevated temperatures.

Paper Details

Date Published: 17 May 2001
PDF: 9 pages
Proc. SPIE 4285, Testing, Reliability, and Applications of Optoelectronic Devices, (17 May 2001); doi: 10.1117/12.426876
Show Author Affiliations
Boris A. Matveev, A.F. Ioffe Physico-Technical Institute (Russia)
Meyrhan Aydaraliev, A.F. Ioffe Physico-Technical Institute (Russia)
Nonna V. Zotova, A.F. Ioffe Physico-Technical Institute (Russia)
Sergey A. Karandashev, A.F. Ioffe Physico-Technical Institute (Russia)
Maxim A. Remennyi, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolai M. Stus', A.F. Ioffe Physico-Technical Institute (Russia)
Georgii N. Talalakin, A.F. Ioffe Physico-Technical Institute (Russia)
Volodymyr K. Malyutenko, Institute of Semiconductor Physics (Ukraine)
Oleg Yu. Malyutenko, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 4285:
Testing, Reliability, and Applications of Optoelectronic Devices
Aland K. Chin; S. C. Wang; Niloy K. Dutta; Niloy K. Dutta; Kurt J. Linden; S. C. Wang, Editor(s)

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