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Proceedings Paper

High-efficiency 650-nm thin film light-emitting diodes
Author(s): Cathleen Rooman; Reiner Windisch; Mark D'Hondt; Prasanta Modak; Ingrid Moerman; Paul Mijlemans; Barundeb Dutta; Gustaaf Borghs; Roger A. Vounckx; Maarten Kuijk; Paul L. Heremans
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Paper Abstract

The external quantum efficiency of planar light-emitting diodes (LED's) can be increased significantly by the approach of a non-resonant cavity (NRC) LED, which consists of texturing the top surface and applying a rear reflector. We demonstrate this approach for the first time on 650-nm InGaP/AlInGaP LED's. The LED's are fabricated using the processing techniques developed previously for 860-nm GaAs/AlGaAs NRC-LED's, which include wet thermal oxidation for the formation of a current aperture. With un-encapsulated NRC- LED's, we report an external quantum efficiency of 24% for an emission wavelength of 655 nm. This is an 11-fold increase of the external quantum efficiency, as compared to conventional devices. Furthermore, the efficiency is demonstrated to increase to 31% by on-wafer encapsulation of the LED's. This results in an optical output power of 4 mW for a drive current of 7 mA.

Paper Details

Date Published: 14 May 2001
PDF: 5 pages
Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); doi: 10.1117/12.426854
Show Author Affiliations
Cathleen Rooman, IMEC and Vrije Univ. Brussel (Belgium)
Reiner Windisch, IMEC (Germany)
Mark D'Hondt, Union Miniere and Univ. Gent/IMEC (Belgium)
Prasanta Modak, Univ. Gent/IMEC (Belgium)
Ingrid Moerman, Univ. Gent/IMEC (Belgium)
Paul Mijlemans, Union Miniere (Belgium)
Barundeb Dutta, IMEC (Belgium)
Gustaaf Borghs, IMEC (Belgium)
Roger A. Vounckx, Vrije Univ. Brussel (Belgium)
Maarten Kuijk, Vrije Univ. Brussel (Belgium)
Paul L. Heremans, IMEC (Belgium)


Published in SPIE Proceedings Vol. 4278:
Light-Emitting Diodes: Research, Manufacturing, and Applications V
H. Walter Yao; E. Fred Schubert, Editor(s)

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