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Proceedings Paper

III-V optically pumped mid-IR LEDs
Author(s): Boris A. Matveev; Nonna V. Zotova; Sergey A. Karandashev; Maxim A. Remennyi; Nikolai M. Stus'; Georgii N. Talalakin
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Paper Abstract

InAs, InSb compounds and InAs(Sb)(P), In(Ga)As(Sb) based heterostructures grown onto InAs substrate have been used as a 'phosphor' for the optically pumped light emitting diodes emitting in the mid-IR spectral range (3 divided by 7 micrometer) at room and above room temperatures. The pulse output of the LEDs composed of GaAs pumping LED ((eta) ext equals 6 divided by 8%) and 2 divided by 20 micrometer thick mid-IR 'phosphor' joint together through a transparent 'glue' was as high as 40 divided by 500 (mu) W which is fairy close to the best reported values for 'cascade' and single quantum well diodes operating in a spontaneous mode.

Paper Details

Date Published: 14 May 2001
PDF: 8 pages
Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); doi: 10.1117/12.426851
Show Author Affiliations
Boris A. Matveev, A.F. Ioffe Physico-Technical Institute (Russia)
Nonna V. Zotova, A.F. Ioffe Physico-Technical Institute (Russia)
Sergey A. Karandashev, A.F. Ioffe Physico-Technical Institute (Russia)
Maxim A. Remennyi, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolai M. Stus', A.F. Ioffe Physico-Technical Institute (Russia)
Georgii N. Talalakin, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 4278:
Light-Emitting Diodes: Research, Manufacturing, and Applications V
H. Walter Yao; E. Fred Schubert, Editor(s)

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