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Proceedings Paper

Current crowding and optical saturation effects in GaInN/GaN LEDs grown on insulating substrates
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Paper Abstract

Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating substrates is analyzed. A model developed reveals an exponential decrease of the current density with distance from the mesa edge. Devices with stripe- shaped mesa geometry display current crowding and a saturation of the optical output power at high injection currents. It is shown that the optical power saturation depends on the device geometry. It is also shown that saturation is less pronounced in LEDs employing a ring-shaped mesa geometry, which reduces current crowding, as compared to the conventional square- shaped mesa geometry.

Paper Details

Date Published: 14 May 2001
PDF: 8 pages
Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); doi: 10.1117/12.426843
Show Author Affiliations
Xiaoyun Guo, Boston Univ. (United States)
E. Fred Schubert, Boston Univ. (United States)
Juergen Jahns, FernUniv. Hagen (Germany)


Published in SPIE Proceedings Vol. 4278:
Light-Emitting Diodes: Research, Manufacturing, and Applications V
H. Walter Yao; E. Fred Schubert, Editor(s)

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