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Proceedings Paper

GaN-based multiple quantum well light-emitting devices
Author(s): Masayoshi Koike; Sho Iwayama; Shiro Yamasaki; Yuta Tezen; Seiji Nagai; Akira Kojima
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Paper Abstract

The GaN-based multiple quantum wells (MQW) laser diodes have been improved excellently by introducing GaN/GaInN optical- guiding layers and by reducing dislocation density. The lifetime of continuous wave operation has been improved to longer than 300 hours with 3 mW at the wavelength of 409 nm.

Paper Details

Date Published: 14 May 2001
PDF: 8 pages
Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); doi: 10.1117/12.426840
Show Author Affiliations
Masayoshi Koike, Toyoda Gosei Co., Ltd. (Japan)
Sho Iwayama, Toyoda Gosei Co., Ltd. (Japan)
Shiro Yamasaki, Toyoda Gosei Co., Ltd. (Japan)
Yuta Tezen, Toyoda Gosei Co., Ltd. (Japan)
Seiji Nagai, Toyoda Gosei Co., Ltd. (Japan)
Akira Kojima, Toyoda Gosei Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4278:
Light-Emitting Diodes: Research, Manufacturing, and Applications V
H. Walter Yao; E. Fred Schubert, Editor(s)

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