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Proceedings Paper

New integrated optical memory based on the plasma wave modulator/switch
Author(s): Sina Khorasani; Alireza Nojeh; Bizhan Rashidian
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Paper Abstract

The feasibility of an integrated optical memory is explored. This memory cell is based on the plasma wave modulator/switch, which has a horizontal layered structure. A transverse voltage maintains a bias for the structure and can be used for electrical write cycle. The cell content is then read by a propagating guided optical wave across the structure. It is also possible to apply full optical read/write/clear cycles as discussed. The read cycle can be either destructive or non-destructive, depending on the wavelength. A modification of this device may be considered as an opto-transistor, in which an optical signal controls the flow of another optical beam.

Paper Details

Date Published: 15 May 2001
PDF: 4 pages
Proc. SPIE 4277, Integrated Optics Devices V, (15 May 2001); doi: 10.1117/12.426809
Show Author Affiliations
Sina Khorasani, Sharif Univ. of Technology (Iran)
Alireza Nojeh, Sharif Univ. of Technology (Iran)
Bizhan Rashidian, Sharif Univ. of Technology (Iran)


Published in SPIE Proceedings Vol. 4277:
Integrated Optics Devices V
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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